KRC158F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC158F 📄📄
Código: FH
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 120
Encapsulados: TFSM
📄📄 Copiar
Búsqueda de reemplazo de KRC158F
- Selecciónⓘ de transistores por parámetros
KRC158F datasheet
krc157f krc158f krc159f.pdf
SEMICONDUCTOR KRC157F KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _
krc151f krc152f krc153f krc154f.pdf
SEMICONDUCTOR KRC151F KRC154F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
krc157f-krc159f.pdf
SEMICONDUCTOR KRC157F KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
krc151f-krc154f.pdf
SEMICONDUCTOR KRC151F KRC154F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0
Otros transistores... INC5006AC1, IMX3FRA, IMX8FRA, IMZ1AFRA, IMZ2AFRA, IMZ88, KRC152F, KRC157F, BD135, KTA1050, INA5001AC1, INA5001AP1, INA5002AC1, INA5002AP1, INA5005AC1, INA5006AC1, INA5008AH1
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
d882 datasheet | tip29 transistor | s9014 transistor datasheet | 2sa1491 | 2sc1313 datasheet | 2sc984 | 2sa872 | 2sc1222




