KTA1050 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1050 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. C A FEATURES Low Collector-Emitter Saturation Voltage VCE(sat)=-2.0V(Max.). E DIM MILLIMETERS _ A 10.16 0.2 + _ B 15.87 0.2 + _ C 2.54 0.2 + _ D 0.8 0.1 + _ E 3.18 + 0.1 _ F 3.3 0.1 + _ G 12.57 0.2 + L M _ H 0.5 0.1 R + _ 13.0 0.5 J + _ K 3.23 0.1 + D L

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L KTA1023 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary to KTC1027 2. COLLECTER 3. BASE MAXIMUM RATINGS (TaB=25 unless otherwise noted) Symbol Parameter Value Unit VB B Collector-Base Voltage -120 V CBO VB B Collector-Emitter Voltage -120 V CEO VB B Emitte

SEMICONDUCTOR KTA1070 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION. B D FEATURES High Voltage VCEO=-200V. DIM MILLIMETERS P High Transition Frequency fT=150MHz(Typ.). DEPTH 0.2 A 7.20 MAX Low Collector Output Capacitance Cob=2.6pF(Typ.). B 5.20 MAX C C 0.60 MAX S Complementary to KTC3467. D 2.50 MAX Q E 1.15 M

SEMICONDUCTOR KTA1049 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=-2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTC2028. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L

SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00

SEMICONDUCTOR KTA1046 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR INDUSTRIAL USE. GENERAL PURPOSE APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 Low Collector Saturation Voltage E C _ 2.70 0.3 + D VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. 0.76+0.09/-0.05 _ E 3.2 0.2 + Complementary to KTC2026. _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0

SEMICONDUCTOR KTA1024 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURES High Voltage VCEO=-150V. Low Output Capacitance Cob=5.0pF(Max.). DIM MILLIMETERS P High Transition Frequency fT=120MHz (Typ.). DEPTH 0.2 A 7.20 MAX Complementary to KTC3206. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _

SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, "L" Suffix) F 2.30 + 0.

SEMICONDUCTOR KTA1023 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTC1027. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -120 V Collector-Base Voltage H 0.55 MAX FF _ J 14.00 + 0.50 K

SEMICONDUCTOR KTA1045D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C

SEMICONDUCTOR KTA1001 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A C FEATURES H hFE=100 320 (VCE=-2V, IC=-0.5A). G hFE=70(Min.) (VCE=-2V, IC=-3A). Low Collector Saturation Voltage. DIM MILLIMETERS VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA). A 4.70 MAX D _ + D B 2.50 0.20 High Power Dissipation. K C 1.70 MAX D 0.

SEMICONDUCTOR KTA1073T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE CONTROL APPLICATIONS. PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. E B K DIM MILLIMETERS FEATURES _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Voltage VCBO=-300V, VCEO=-300V _ C 0.70 + 0.05 2 3 Low Saturation Voltage VCE(sat)=-0.5V(Max.) _ D 0.4 + 0

SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS _ VCE(sat)=-2.0V(Max.). A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTC2022D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00

SEMICONDUCTOR KTA1021 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellent hFE Linearity. hFE(2)=25(Min.) at VCE=-6V, IC=-400mA DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTC1020. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J 1

SEMICONDUCTOR KTA1040D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ Straight Lead (IPAK, "L" Suffix) F 2.30

KTA1024 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features High Voltage VCEO=-150V. 7.800 8.200 Low Output Capacitance Cob=5.0pF(Max.). High Transition frequency fT=120MHz (Typ.). 0.600 0.800 Complementary to KTC3206. 0.350 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.550 13.800 14.200 Symbol Paramete

KTA1023 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 2 3 4.700 1 5.100 Features Complementary to KTC1027 7.800 8.200 MAXIMUM RATINGS (TB B=25 unless otherwise noted) A 0.600 0.800 Symbol Parameter Value Units VB B Collector-Base Voltage -120 V CBO 0.350 0.550 VB B Collector-Emitter Voltage -120 V CEO 13.800 14.200 VB B Emitter-Base Vo

KTA1023 WEITRON PNP Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25 unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO -120 V -120 V Collector-Emitter Voltage VCEO -5 V Emitter-Base Voltage VEBO -0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.9 W Junction Temperature TJ 150

DIP Type Transistors PNP Transistors KTA1038 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features High Breakdown Voltage Low Collector Saturation Voltage Comlementary to KTC2018 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1. Base 2. Collector 3.

DIP Type Transistors PNP Transistors KTA1070 TO-92L Unit mm 4.9 0.2 0.7 0.1 Features Low collector output capacitance 0.45 0.1 High voltage and High fT Complementary to KTC3467 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type Transistors PNP Transistors KTA1049 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low collector saturation voltage Complementary to KTC2028 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

DIP Type Transistors PNP Transistors KTA1036 TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features Low Collector Saturation Voltage Comlementary to KTC2016 1.27 0.10 1.52 0.10 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1. Base 2. Collector 10.00 0.20 3. Emitter Ab

DIP Type Transistors PNP Transistors KTA1046 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low saturation voltage and good linearity of hFE. Complementary to KTC2026 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2.54typ 2. Collector 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

DIP Type Transistors PNP Transistors KTA1024 TO-92L Unit mm 4.9 0.2 Features 0.7 0.1 High Voltage and High fT Low Output Capacitance 0.45 0.1 Comlementary to KTC3206 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150

SMD Type Transistors PNP Transistors KTA1001 1.70 0.1 Features Low Collector Saturation Voltage High Power Dissipation 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -8 Collector Current - Con

DIP Type Transistors PNP Transistors KTA1021 TO-92M Unit mm 6.0 0.2 Features Excellent hFE Linearity 1.0 0.1 1 Watt Amplifier Application 0.50 0.1 Complementary to KTC1020 2 1 3 1.50 3.0 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35

isc Silicon PNP Power Transistors KTA1046 DESCRIPTION Low Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Complement to Type KTC2026 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose applications . ABSOLUTE

isc Silicon PNP Power Transistor KTA1042D DESCRIPTION Low Collector-Emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -100