KTC3199-O Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTC3199-O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO92S

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KTC3199-O datasheet

 6.1. Size:557K  mcc
 ktc3199-bl-gr-o-y.pdf pdf_icon

KTC3199-O

KTC3199-O MCC Micro Commercial Components TM KTC3199-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3199-GR Phone (818) 701-4933 Fax (818) 701-4939 KTC3199-BL Features High DC Current Gain hFE=70 700 NPN General Excellent hFE Linearity hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise NF=1.0dB(Typ.), 10dB(Max.) Purpose Application Compl

 7.1. Size:562K  jiangsu
 ktc3199.pdf pdf_icon

KTC3199-O

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S KTC3199 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Complementary to KTA1267 1 2 3 Equivalent Circuit C3199 C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM

 7.2. Size:78K  kec
 ktc3199.pdf pdf_icon

KTC3199-O

SEMICONDUCTOR KTC3199 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION SWITCHING APPLICATION. B FEATURES High DC Current Gain hFE=70 700. Excellent hFE Linearity DIM MILLIMETERS O A 3.20 MAX hFE(0.1mA)/hFE(2mA)=0.95(Typ.). H M B 4.30 MAX C 0.55 MAX Low Noise NF=1dB(Typ.), 10dB(Max.). _ D 2.40 + 0.15 E 1.27 Complementary to KTA1267. F 2.30

 7.3. Size:60K  kec
 ktc3199l.pdf pdf_icon

KTC3199-O

SEMICONDUCTOR KTC3199L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES B High DC Current Gain hFE=70 700. Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS O A 3.20 MAX Low Noise NF=0.2dB(Typ.), 3dB(Max.). H M B 4.30 MAX C 0.55 MAX Complementary to KTA1267L. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ +

MOSTRAR MÁS

Otros transistores... TFS4082, TFS4083, TFS5095, KTA2014-GR, KTA2014-O, KTA2014-Y, KTC3199-BL, KTC3199-GR, TIP3055, KTC3199-Y, KTC3205-O, KTC3205-Y, KTC3880LT1, TPA2029NND03, TPA2030NND03, TPC2715NND03, TPC5658NND03