KTC3199-O . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3199-O
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO92S
Búsqueda de reemplazo de transistor bipolar KTC3199-O
KTC3199-O Datasheet (PDF)
ktc3199-bl-gr-o-y.pdf
KTC3199-OMCCMicro Commercial ComponentsTMKTC3199-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3199-GRPhone: (818) 701-4933Fax: (818) 701-4939 KTC3199-BLFeatures High DC Current Gain: hFE=70~700NPN General Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) Low Noise: NF=1.0dB(Typ.), 10dB(Max.)Purpose Application Compl
ktc3199.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S KTC3199 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High DC Current Gain3. BASE Complementary to KTA1267123 Equivalent Circuit C3199C3199=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORM
ktc3199.pdf
SEMICONDUCTOR KTC3199TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATIONSWITCHING APPLICATION.BFEATURES High DC Current Gain : hFE=70~700. Excellent hFE LinearityDIM MILLIMETERSOA 3.20 MAX: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).HM B 4.30 MAXC 0.55 MAX Low Noise : NF=1dB(Typ.), 10dB(Max.)._D 2.40 + 0.15E 1.27 Complementary to KTA1267.F 2.30
ktc3199l.pdf
SEMICONDUCTOR KTC3199LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.FEATURES B High DC Current Gain : hFE=70 700. Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERSOA 3.20 MAX Low Noise : NF=0.2dB(Typ.), 3dB(Max.).HM B 4.30 MAXC 0.55 MAX Complementary to KTA1267L._D 2.40 + 0.15E 1.27F 2.30C_+
ktc3199m.pdf
KTC3199M(BR3DG3199M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , h , FEHigh DC current gain, excellent hFE linearity, low noise / Applications General amplifier
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: SU169 | 2N1208
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