TTC016 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TTC016

Código: C016

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 24 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 400

Encapsulados: NEW-PW-MOLD

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TTC016 datasheet

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TTC016

TTC016 Bipolar Transistors Silicon NPN Epitaxial Type TTC016 TTC016 TTC016 TTC016 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 3

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TTC016

TTC011B NPN TTC011B TTC011B TTC011B TTC011B 1. 1. 1. 1. 2. 2. 2. 2. (1) VCEO = 230 V ( ) (2) Cob = 20 pF ( ) (3)

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TTC016

TTC011 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 TTC011 TTC011 TTC011 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching LCD Backlighting 2. Features 2. Features 2. Features 2. Features (1) High collector breakdown voltage VCEO = 230 V (2) High DC current gain hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Interna

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TTC016

TTC012 Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 TTC012 TTC012 TTC012 1. Applications 1. Applications 1. Applications 1. Applications High-Speed High-Voltage Switching Switching Voltage Regulators High-Speed DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) High speed switching tf = 0.15 s (typ.) (IC = 0.5 A) (2) High collec

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