TSC5302DCH Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSC5302DCH

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: TO251

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TSC5302DCH datasheet

 6.1. Size:233K  taiwansemi
 tsc5302d.pdf pdf_icon

TSC5302DCH

TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab

 8.1. Size:374K  taiwansemi
 tsc5303d.pdf pdf_icon

TSC5302DCH

TSC5303D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 3A VCE(SAT) 0.17V @ IC=1A, IB=0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable

 8.2. Size:401K  taiwansemi
 tsc5301dct.pdf pdf_icon

TSC5302DCH

TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread E

 8.3. Size:261K  taiwansemi
 tsc5304ed.pdf pdf_icon

TSC5302DCH

TSC5304ED High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Base 2. Collector BVCEO 400V 3. Emitter BVCBO 700V IC 4A VCE(SAT) 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation Low Base Drive Requirement Suitable for Half

MOSTRAR MÁS

Otros transistores... TFN1386L, TFN1424, TFN1514, TFN1590, TFN1721, TFN1759, TFN1768, TSC5301DCT, BC547B, TSC5302DCP, TSC5303DCH, TSC5303DCP, TSC5304DCH, TSC5304DCP, TSC5304EDCH, TSC5304EDCP, TSC5327CZ