TSC5303DCH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TSC5303DCH
   Código: 5303D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO251

Búsqueda de reemplazo de transistor bipolar TSC5303DCH

TSC5303DCH Datasheet (PDF)

6.1. Size:374K taiwansemi
tsc5303d.pdf

TSC5303D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 3A VCE(SAT) 0.17V @ IC=1A, IB=0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable

8.1. Size:401K taiwansemi
tsc5301dct.pdf

TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread E

8.2. Size:261K taiwansemi
tsc5304ed.pdf

TSC5304ED High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base 2. Collector BVCEO 400V 3. Emitter BVCBO 700V IC 4A VCE(SAT) 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation Low Base Drive Requirement Suitable for Half

8.3. Size:203K taiwansemi
tsc5304d.pdf

TSC5304D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable S

8.4. Size:233K taiwansemi
tsc5302d.pdf

TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 12A02CH-TL-E | 2C6193 | 2N6585 | 2SC608T

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