2N6738 Todos los transistores

 ..1. Size:153K  bocasemi
 2n6738 2n6739 2n6740.pdf

A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com

 ..2. Size:190K  inchange semiconductor
 2n6738.pdf

isc Silicon NPN Power Transistor 2N6738 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for

 ..3. Size:60K  inchange semiconductor
 2n6738 2n6739 2n6740.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION With TO-220 package High voltage ratings Low collector saturation voltage Fast switching speed APPLICATIONS Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION 1 Base Co

 9.1. Size:50K  central
 2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.2. Size:26K  diodes
 2n6732.pdf

PNP SILICON PLANAR 2N6732 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I

 9.3. Size:26K  diodes
 2n6731.pdf

NPN SILICON PLANAR 2N6731 MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I

 9.4. Size:27K  diodes
 2n6728 2n6729 2n6730.pdf

PNP SILICON PLANAR 2N6728 2N6729 MEDIUM POWER TRANSISTORS 2N6730 ISSUE 1 MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I

 9.5. Size:189K  inchange semiconductor
 2n6739.pdf

isc Silicon NPN Power Transistor 2N6739 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for