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TFN2412 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TFN2412
   Código: C4
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

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TFN2412 Datasheet (PDF)

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tfn2412.pdf

TFN2412
TFN2412

Tin Far Electronic CO.,LTDPage No: 1/5TFN2412 50V 150mA NPN TRANSISTOR Description The TFN2412 is designed for using in driver stage of AF amplifier and general purpose switching application. Low Cob, typically Cob=2.0pF Complementary to TFN1037 Pb-free packageSymbol OutlineTFN2412 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings

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TFN2412

Tin Far Electronic CO.,LTDPage No: 2/6Characteristics (Ta=25C)Symbol Min. Typ. Max. Unit Test ConditionsBV 75 - - V I =10A CBO CBV 40 - - V I =10mA CEO CBV 6 - - V I =10A EBO EI - - 10 nA V =60V CBO CBI - - 10 nA V =60V, V =-3V CEX CE BEI - - 10 nA V =3V EBO EB*V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B*V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B*

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tfn2444.pdf

TFN2412
TFN2412

Tin Far Electronic CO.,LTD Page No: 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol OutlineTFN2444 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C)

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MT6L76FS

 

 
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History: MT6L76FS

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