TFN2412 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TFN2412

Código: C4

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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TFN2412 datasheet

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TFN2412

Tin Far Electronic CO.,LTD Page No 1/5 TFN2412 50V 150mA NPN TRANSISTOR Description The TFN2412 is designed for using in driver stage of AF amplifier and general purpose switching application. Low Cob, typically Cob=2.0pF Complementary to TFN1037 Pb-free package Symbol Outline TFN2412 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings

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TFN2412

Tin Far Electronic CO.,LTD Page No 2/6 Characteristics (Ta=25 C) Symbol Min. Typ. Max. Unit Test Conditions BV 75 - - V I =10 A CBO C BV 40 - - V I =10mA CEO C BV 6 - - V I =10 A EBO E I - - 10 nA V =60V CBO CB I - - 10 nA V =60V, V =-3V CEX CE BE I - - 10 nA V =3V EBO EB *V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B *V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B *

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TFN2412

Tin Far Electronic CO.,LTD Page No 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol Outline TFN2444 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C)

Otros transistores... TSC5304DCH, TSC5304DCP, TSC5304EDCH, TSC5304EDCP, TSC5327CZ, TFN2059, TFN2150, TFN2411, B647, TFN2444, TFN3838, TFN3906, TFN4061, TFN4505, TFN5094, TS13002ACT, TS13002CT