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TS13002CT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TS13002CT
   Código: TSC13002
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 21 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO92

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TS13002CT Datasheet (PDF)

 ..1. Size:389K  taiwansemi
ts13002ct.pdf

TS13002CT TS13002CT

TS13002 High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.1. Size:190K  taiwansemi
ts13002a.pdf

TS13002CT TS13002CT

TS13002A High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 7.2. Size:278K  taiwansemi
ts13002a b07.pdf

TS13002CT TS13002CT

TS13002A High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 7.3. Size:278K  taiwansemi
ts13002 b07.pdf

TS13002CT TS13002CT

TS13002 High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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