TS13003MVCT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TS13003MVCT

Código: TSC13003M

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 5.8 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 21 pF

Ganancia de corriente contínua (hFE): 6

Encapsulados: TO92

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TS13003MVCT datasheet

 5.1. Size:441K  taiwansemi
 ts13003mv.pdf pdf_icon

TS13003MVCT

TS13003MV High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.1. Size:399K  taiwansemi
 ts13003bct.pdf pdf_icon

TS13003MVCT

TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.2. Size:333K  taiwansemi
 ts13003 d07.pdf pdf_icon

TS13003MVCT

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition Pin Definition PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto

 7.3. Size:276K  taiwansemi
 ts13003hv a07.pdf pdf_icon

TS13003MVCT

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

MOSTRAR MÁS

Otros transistores... TFN4505, TFN5094, TS13002ACT, TS13002CT, TS13003BCT, TS13003CK, TS13003CT, TS13003HVCT, C945, TS13005CI, TS13005CZ, TS13007BCZ, TS13009CZ, TFN5177, TFN807, TFN817, TFN847