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TS13003MVCT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TS13003MVCT
   Código: TSC13003M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5.8 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 21 pF
   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: TO92
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TS13003MVCT Datasheet (PDF)

 5.1. Size:441K  taiwansemi
 ts13003mv.pdf pdf_icon

TS13003MVCT

TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.1. Size:399K  taiwansemi
 ts13003bct.pdf pdf_icon

TS13003MVCT

TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.2. Size:333K  taiwansemi
 ts13003 d07.pdf pdf_icon

TS13003MVCT

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto

 7.3. Size:276K  taiwansemi
 ts13003hv a07.pdf pdf_icon

TS13003MVCT

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3763S | CZTA77 | 2SC354

 

 
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