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TS13003MVCT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TS13003MVCT
   Código: TSC13003M
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 5.8 W
   Tensión colector-base (Vcb): 800 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 21 pF
   Ganancia de corriente contínua (hfe): 6
   Paquete / Cubierta: TO92
 

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TS13003MVCT Datasheet (PDF)

 5.1. Size:441K  taiwansemi
 ts13003mv.pdf pdf_icon

TS13003MVCT

TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.1. Size:399K  taiwansemi
 ts13003bct.pdf pdf_icon

TS13003MVCT

TS13003B High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T

 7.2. Size:333K  taiwansemi
 ts13003 d07.pdf pdf_icon

TS13003MVCT

TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto

 7.3. Size:276K  taiwansemi
 ts13003hv a07.pdf pdf_icon

TS13003MVCT

TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

MOSTRAR MÁS

Otros transistores... TFN4505 , TFN5094 , TS13002ACT , TS13002CT , TS13003BCT , TS13003CK , TS13003CT , TS13003HVCT , 2N5401 , TS13005CI , TS13005CZ , TS13007BCZ , TS13009CZ , TFN5177 , TFN807 , TFN817 , TFN847 .

History: D60T4040 | CV7062 | 2SC4161L

 

 
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