TIP112L-TN3 Todos los transistores

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TIP112L-TN3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP112L-TN3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hfe): 500

Empaquetado / Estuche: TO252

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TIP112L-TN3 Datasheet (PDF)

1.1. tip112l-tn3.pdf Size:184K _update

TIP112L-TN3
TIP112L-TN3

UNISONIC TECHNOLOGIES CO., LTD TIP112 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP112 is designed for such applications as: DC/DC converters supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and

4.1. tip110 tip111 tip112 to-220.pdf Size:228K _mcc

TIP112L-TN3
TIP112L-TN3

MCC Micro Commercial Components TM TIP110/111/112 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features The complementary PNP types are the TIP115/116/117 respectively Silicon NPN Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy meets UL

4.2. tip112.pdf Size:74K _kec

TIP112L-TN3
TIP112L-TN3

SEMICONDUCTOR TIP112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN A BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. R S FEATURES P D High DC Current Gain. DIM MILLIMETERS : hFE=1000(Min.), VCE=4V, IC=1A. A 10.30 MAX B 15.30 MAX Low Collector-Emitter Saturation Voltage. C 0.80 _ + Complementary to TIP117. D ?3.60 0.20 T E 3.00 F 6.70

 4.3. tip112f.pdf Size:444K _kec

TIP112L-TN3
TIP112L-TN3

SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E High DC Current Gain. C _ 2.70 0.3 + D 0.76+0.09/-0.05 : hFE=1000(Min.), VCE=4V, IC=1A. _ E ?3.2 0.2 + _ F 3.0 0.3 + Low Collector-Emitter Saturation Voltage.

4.4. tip112.pdf Size:208K _lge

TIP112L-TN3
TIP112L-TN3

TIP112 TO-220 Darlington Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 100 V VCEO Col

 4.5. htip112.pdf Size:52K _hsmc

TIP112L-TN3
TIP112L-TN3

Spec. No. : HE200203 HI-SINCERITY Issued Date : 2000.08.01 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Tempera

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