TIP35CW Todos los transistores

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TIP35CW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP35CW

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de transistor bipolar TIP35CW

TIP35CW Datasheet (PDF)

1.1. tip35cw_tip36cw.pdf Size:190K _update

TIP35CW
TIP35CW

TIP35CW TIP36CW Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 ■ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exc

4.1. tip35c_tip36c.pdf Size:194K _st2

TIP35CW
TIP35CW

TIP35C TIP36C Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose 3 2 Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gai

4.2. tip35cp_tip36cp.pdf Size:196K _st2

TIP35CW
TIP35CW

TIP35CP TIP36CP Complementary power transistors . Features Low collector-emitter saturation voltage Complementary NPN-PNP transistors Applications General purpose 3 Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with base island layout. The resulting transistors show exceptional high gain

4.3. tip35a_tip35b_tip35c_tip36a_tip36b_tip36c.pdf Size:80K _onsemi

TIP35CW
TIP35CW

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS

4.4. tip35c.pdf Size:138K _utc

TIP35CW
TIP35CW

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS ? DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. ? INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Ha

4.5. tip35ca.pdf Size:440K _kec

TIP35CW
TIP35CW

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0.

4.6. tip35c.pdf Size:289K _kec

TIP35CW
TIP35CW

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax:25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0 M

Otros transistores... TH513 , TH560 , TH562 , THA15 , THA42TTD03 , THA92TTD03 , TIP110A , TIP112L-TN3 , C102 , TIP36CW , TSD1664CY , TSD1760CP , TSD1858CH , TSD2098ACY , TSD2118CP , TSD2150A , TSD2444CX .

 


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Introduzca al menos 2 números o letras