TPV591
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPV591
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5.3
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 22
V
Tensión emisor-base (Veb): 3.5
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2000
MHz
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: STYLE-280-4L-STUD
Búsqueda de reemplazo de transistor bipolar TPV591
TPV591
Datasheet (PDF)
..1. Size:241K hgsemi
tpv591.pdf
HG RF POWER TRANSISTORTPV591SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .280 4L STUDThe HG TPV591 is a CommonEmitter Device Designed for HighLinearity Class A Television Band IVand V Transmitters.FEATURES INCLUDE: Gold Metalization Emitter BallastingMAXIMUM RATINGSIC 300 mAVCB 45 VPDISS 5.3 W @ TC = 25 OCOTJ -
9.1. Size:83K motorola
tpv598re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV598/DThe RF LineUHF Linear Power TransistorTPV598Designed for 4.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC
9.2. Size:95K motorola
tpv597re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV597/DThe RF LineUHF Linear Power TransistorTPV597. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 1.0 W Pref @ 58 dB IMD 20 V
9.3. Size:98K motorola
tpv596a.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV596A/DThe RF LineUHF Linear Power TransistorTPV596A. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and500 mW Band V TV transposer stages. Gold metallization and diffused emitterballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470860 MHz)
9.4. Size:94K motorola
tpv596ar.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TPV596A/DThe RF LineUHF Linear Power TransistorTPV596A. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and500 mW Band V TV transposer stages. Gold metallization and diffused emitterballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470860 MHz)
9.6. Size:243K hgsemi
tpv598.pdf
HG RF POWER TRANSISTORTPV598SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for 4.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC High Gain 7.0 dB Min
9.7. Size:245K hgsemi
tpv593.pdf
HG RF POWER TRANSISTORTPV593SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION:PACKAGE STYLE .280 4L STUDThe HGTPV593 is a CommonEmitter Device Designed for Class AHigh Linearity Television Band IV andV Transmitter Applications.FEATURES INCLUDE: Gold Metalization Emitter Ballasting High GainMAXIMUM RATINGSIC 1.2 AVCB 45 VPDISS 17
9.8. Size:272K hgsemi
tpv597.pdf
HG RF POWER TRANSISTORTPV597SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Goldmetallized dice and diffused emitter ballast resistors are used to enhancereliability, ruggedness and linearity. Band IV and V (470860 MHz) 1.0 W Pref @ 58 dB IMD 20 V VCC High Gain 11 d
9.9. Size:201K syntez microelectronics
tpv595.pdf
TPV595SILICON NPN MICROWAVE POWER TRANSISTOR14 W, in the 470 860 MHz Range ________________________________________________The silicon n-p-n transistor is designed for ClassAB Push Pull, Common Emitter from 470 to 860 MHzApplications.Features: Power Gain: 8.5 dB Min Output Power: 14 W IMD3: -47 dB MaxAbsolute Maximum RatingsParameters Sym Value UnitCollector
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