TPV596A Datasheet. Equivalente

 ..1. Size:98K  motorola
 tpv596a.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz)

 0.1. Size:94K  motorola
 tpv596ar.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz)

 9.1. Size:83K  motorola
 tpv598re.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV598/D The RF Line UHF Linear Power Transistor TPV598 Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC

 9.2. Size:95K  motorola
 tpv597re.pdf

 9.3. Size:90K  njs
 tpv595a.pdf

 9.4. Size:243K  hgsemi
 tpv598.pdf

HG RF POWER TRANSISTOR TPV598 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC High Gain 7.0 dB Min

 9.5. Size:241K  hgsemi
 tpv591.pdf

HG RF POWER TRANSISTOR TPV591 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE Gold Metalization Emitter Ballasting MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3 W @ TC = 25 OC O TJ -

 9.6. Size:245K  hgsemi
 tpv593.pdf

HG RF POWER TRANSISTOR TPV593 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HGTPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE Gold Metalization Emitter Ballasting High Gain MAXIMUM RATINGS IC 1.2 A VCB 45 V PDISS 17

 9.7. Size:272K  hgsemi
 tpv597.pdf

HG RF POWER TRANSISTOR TPV597 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 1.0 W Pref @ 58 dB IMD 20 V VCC High Gain 11 d

 9.8. Size:201K  syntez microelectronics
 tpv595.pdf