TSA143ENND03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSA143ENND03  📄📄 

Código: 13

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: WBFBP-03B

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TSA143ENND03 datasheet

 ..1. Size:153K  jiangsu
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TSA143ENND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA143ENND03 TRANSISTOR WBFBP-03B (1.2 1.2 0.5) TOP unit mm DESCRIPTION PNP Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an 2. GND inverter circuit without connecting external input BACK 3. OUT resistors

 8.1. Size:277K  jiangsu
 tsa143znnd03.pdf pdf_icon

TSA143ENND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA143ZNND03 TRANSISTOR WBFBP-03B (1.2 1.2 0.5) TOP unit mm DESCRIPTION PNP Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent circui

 8.2. Size:342K  jiangsu
 tsa143tnnd03.pdf pdf_icon

TSA143ENND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA143TNND03 TRANSISTOR WBFBP-03B (1.2 1.2 0.5) TOP unit mm DESCRIPTION PNP Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent cir

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