2N6772 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6772
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 550 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
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2N6772 Datasheet (PDF)
2n6771 2n6772 2n6773.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONSDesigned for use in off-line power supplies and is also well suited for use in a wide
2n6772.pdf

isc Silicon NPN Power Transistors 2N6772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir
2n6770 irf450.pdf

PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS
Otros transistores... 2N675 , 2N6751 , 2N6752 , 2N6753 , 2N6754 , 2N676 , 2N677 , 2N6771 , C5198 , 2N6773 , 2N6774 , 2N6775 , 2N6776 , 2N677A , 2N677B , 2N677C , 2N678 .
History: BSV50F | BD273 | D33D25 | 2SB1165R | ET366 | 2SD2144 | NKT125
History: BSV50F | BD273 | D33D25 | 2SB1165R | ET366 | 2SD2144 | NKT125



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