TPT5609-A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPT5609-A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 190 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO92L
Búsqueda de reemplazo de transistor bipolar TPT5609-A
TPT5609-A Datasheet (PDF)
tpt5609.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TPT5609 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent linearity of Current Gain NPN Epitaxial Low saturation voltage Silicon Transistor Maximum Ratings Symbol Rating Rating Unit TO-92L VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 25 V
tpt5609.pdf
TPT5609 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage Complementary to TPT5610 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO 25 V Collector- Base Voltage 14.200 VCEO 20 V
tpt5610.pdf
TPT5610 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO -25 V Collector- Base Voltage 14.200 VCEO -20
Otros transistores... TSA143ENND03 , TSA143TNND03 , TSA143ZNND03 , TSA1765CW , TSA5888CY , TSA874CW , TSA884CX , TSA894CT , TIP41 , TPT5609-B , TPT5609-C , TSC10CT , TSC114ENND03 , TSC114TNND03 , TSC114YNND03 , TSC1203ECM , TP9383 .
History: 2SC2716 | TP2218
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