NJT4031N Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJT4031N

Código: 4031N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 215 MHz

Capacitancia de salida (Cc): 25 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT223

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NJT4031N datasheet

 ..1. Size:180K  onsemi
 njt4031n njv4031nt1g njv4031nt3g.pdf pdf_icon

NJT4031N

NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http //onsemi.com Features Epoxy Meets UL 94, V-0 @ 0.125 in NPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring 3.0 AMPERES Unique Site and Control Change Requirements; AEC-Q101 40 VOLTS, 2.0 WATTS Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

 ..2. Size:112K  onsemi
 njt4031n.pdf pdf_icon

NJT4031N

NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http //onsemi.com Features Epoxy Meets UL 94, V-0 @ 0.125 in NPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring 3.0 AMPERES Unique Site and Control Change Requirements; AEC-Q101 40 VOLTS, 2.0 WATTS Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

 8.1. Size:190K  onsemi
 njt4030p njv4030p.pdf pdf_icon

NJT4031N

Bipolar Power Transistors PNP Silicon NJT4030P, NJV4030P Features Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3.0 AMPERES Compliant 40 VOLTS, 2.0 WATT

 8.2. Size:132K  onsemi
 njt4030p-t.pdf pdf_icon

NJT4031N

NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http //onsemi.com Features PNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERES VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc 40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2

MOSTRAR MÁS

Otros transistores... NJL0281DG, NJL0302DG, NJL1302DG, NJL3281DG, NJL4281DG, NJL4302DG, NJT4030PT1G, NJT4030PT3G, 2222A, NJT4031NT3G, NSL12AWT1G, NSM4002MR6, NSM6056M, NSM80100MT1G, NSM80101MT1G, NSS12100M3, NSS12100UW3TCG