NSV12100UW3TCG Todos los transistores

 

NSV12100UW3TCG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV12100UW3TCG
   Código: VG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.1 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: WDFN3
 

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NSV12100UW3TCG Datasheet (PDF)

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NSV12100UW3TCG

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:100K  onsemi
 nsv12100xv6t1g.pdf pdf_icon

NSV12100UW3TCG

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

Otros transistores... NSM80100MT1G , NSM80101MT1G , NSS12100M3 , NSS12100UW3TCG , NSS12100XV6 , NSS12200LT1G , NSS12200W , NSS12201LT1G , D667 , NSV12100XV6T1G , NSV1C200LT1G , NSV1C200MZ4T1G , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , NSV1C301ET4G , NSV20101JT1G .

History: BCW52 | MPS-U07 | FHD21F

 

 
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