NSV12100UW3TCG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV12100UW3TCG

Código: VG

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.1 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: WDFN3

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NSV12100UW3TCG datasheet

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 nsv12100uw3tcg.pdf pdf_icon

NSV12100UW3TCG

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.1. Size:100K  onsemi
 nsv12100xv6t1g.pdf pdf_icon

NSV12100UW3TCG

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

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