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NJV4031NT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJV4031NT3G
   Código: 4031N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 215 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223
 

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NJV4031NT3G Datasheet (PDF)

 ..1. Size:180K  onsemi
 njt4031n njv4031nt1g njv4031nt3g.pdf pdf_icon

NJV4031NT3G

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeatures Epoxy Meets UL 94, V-0 @ 0.125 inNPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring3.0 AMPERESUnique Site and Control Change Requirements; AEC-Q10140 VOLTS, 2.0 WATTSQualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

 5.1. Size:132K  onsemi
 njv4031nt.pdf pdf_icon

NJV4031NT3G

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeaturesNPN TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - 40 VOLTS, 2.0 WATTShFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.1

 8.1. Size:132K  onsemi
 njv4030pt.pdf pdf_icon

NJV4031NT3G

NJT4030P,NJV4030PT1G,NJV4030PT3GBipolar Power TransistorsPNP Siliconhttp://onsemi.comFeaturesPNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2

 8.2. Size:190K  onsemi
 njt4030p njv4030p.pdf pdf_icon

NJV4031NT3G

Bipolar Power TransistorsPNP SiliconNJT4030P, NJV4030PFeatures Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 AMPERESCompliant40 VOLTS, 2.0 WATT

MOSTRAR MÁS

Otros transistores... NSV1C301ET4G , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , BD777 , NJVBUB323ZT4G , NJVMJB41CT4G , NJVMJB42CT4G , NJVMJB44H11T4G , NJVMJB45H11T4G , NJVNJD2873T4G , NJVNJD35N04G , NJVNJD35N04T4G .

 

 
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