NJVNJD35N04G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVNJD35N04G  📄📄 

Código: NJD35N04

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 2000

Encapsulados: TO252

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NJVNJD35N04G datasheet

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NJVNJD35N04G

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NJVNJD35N04G

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NJVNJD35N04G

NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N

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