NSS20500UW3TBG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS20500UW3TBG

Código: VC

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 180 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: WDFN3

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NSS20500UW3TBG datasheet

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NSS20500UW3TBG

NSS20500UW3 20 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importan

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NSS20500UW3TBG

NSS20501UW3T2G 20 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.2. Size:161K  onsemi
nss20501uw3.pdf pdf_icon

NSS20500UW3TBG

NSS20501UW3 20 V, 7.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importan

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