2N679 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 93984AREPETITIVE AVALANCHE AND dv/dt RATED IRFE220HEXFETTRANSISTORS JANTX2N6790USURFACE MOUNT (LCC-18)REF:MIL-PRF-19500/555 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE220 100V 0.80 2.8ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology. Desinged t

Provisional Data Sheet No. PD - 9.1666AIRFE130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796UHEXFET TRANSISTOR JANTXV2N6796U[REF:MIL-PRF-19500/557]N-CHANNEL 100Volt, 0.18 Product Summary, HEXFETThe leadless chip carrier (LCC) package representsPart Number BVDSS RDS(on) IDthe logical next step in the continual evolution ofIRFE130 100V 0.18 8.0A

PD -90428CIRFF320REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792HEXFETTRANSISTORS JANTXV2N6792THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF320 400V 1.8 2.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD - 90427CIRFF220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790HEXFETTRANSISTORS JANTXV2N6790THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF220 200V 0.80 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

PD - 93986AIRFE420JANTX2N6794UREPETITIVE AVALANCHE AND dv/dt RATEDJANTXV2N6794UHEXFETTRANSISTORSREF:MIL-PRF-19500/555SURFACE MOUNT (LCC-18)500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE420 500V 3.0 1.4ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology.

PD -90431CIRFF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798HEXFETTRANSISTORS JANTXV2N6798THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF230 200V 0.40 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

PD - 93985AIRFE320JANTX2N6792UREPETITIVE AVALANCHE AND dv/dt RATEDJANTXV2N6792UHEXFETTRANSISTORSREF:MIL-PRF-19500/555SURFACE MOUNT (LCC-18)400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE320 400V 1.8 1.8ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology.

PD - 90429CIRFF420REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6794HEXFETTRANSISTORS JANTXV2N6794THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF420 500V 3.0 1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

2N6790Data Sheet December 20013.5A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFET 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800gate power MOS field effect transistor designed for SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N68002N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,QUALIFIED TO MIL-PRF-19500/557100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/557DESCRIPTIO

2N6796LCC4MECHANICAL DATADimensions in mm (inches)N-CHANNEL9.14 (0.360)1.27 (0.050) 8.64 (0.340) POWER MOSFET1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300) VDSS = 100V7.12 (0.280)9 10.76 (0.030)8 20.51 (0.020) ID = 7.4A0.33 (0.013)Rad. RDS(ON) = 0.180.08 (0.003)7 6 5 4 30.43 (0.017)Rad.1.39 (0.05

2N6796MECHANICAL DATADimensions in mm (inches)TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! RDSON = 0.18

2N6798MECHANICAL DATADimensions in mm (inches)N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES V(BR)DSS = 200V ID = 5.5A ! RDSON = 0.40

2N6794SEMELABMECHANICAL DATADimensions in mm (inches)NCHANNEL POWER MOSFET BVDSS 500V ID(cont) 1.5 RDS(on) 3.0 FEATURES ! AVALANCHE ENERGY RATED

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6796 2N6796U JANJANTXJANTXVABSOLUTE MAXIMUM RATINGS (TC = +25C un

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798UJANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag