NJVMJD127T4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVMJD127T4G

Código: J127

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO252

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NJVMJD127T4G datasheet

 5.1. Size:142K  onsemi
 njvmjd122 njvmjd127.pdf pdf_icon

NJVMJD127T4G

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

 6.1. Size:175K  onsemi
 njvmjd128.pdf pdf_icon

NJVMJD127T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo

 7.1. Size:153K  onsemi
 njvmjd112 njvmjd117.pdf pdf_icon

NJVMJD127T4G

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas

 7.2. Size:148K  onsemi
 njvmjd148.pdf pdf_icon

NJVMJD127T4G

MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

MOSTRAR MÁS

Otros transistores... NSS40200LT1G, NSS40201LT1G, NSS40300DDR2G, NSS40300MDR2G, NJVMJD112G, NJVMJD112T4G, NJVMJD117T4G, NJVMJD122T4G, A1941, NJVMJD128T4G, NJVMJD148T4G, NJVMJD210T4G, NJVMJD243T4G, NJVMJD253T4G, NJVMJD2955T4G, NJVMJD3055T4G, NJVMJD31CG