NJVMJD127T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NJVMJD127T4G
   Código: J127
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de transistor bipolar NJVMJD127T4G

NJVMJD127T4G Datasheet (PDF)

5.1. Size:142K onsemi
njvmjd122 njvmjd127.pdf

MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

6.1. Size:175K onsemi
njvmjd128.pdf

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

7.1. Size:153K onsemi
njvmjd112 njvmjd117.pdf

MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

7.2. Size:148K onsemi
njvmjd148.pdf

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: DPLS325E

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D