NJVMJD128T4G Todos los transistores

 

NJVMJD128T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJVMJD128T4G
   Código: J128
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 300 pF
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar NJVMJD128T4G

 

NJVMJD128T4G Datasheet (PDF)

 5.1. Size:175K  onsemi
njvmjd128.pdf

NJVMJD128T4G NJVMJD128T4G

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

 6.1. Size:142K  onsemi
njvmjd122 njvmjd127.pdf

NJVMJD128T4G NJVMJD128T4G

MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

 7.1. Size:153K  onsemi
njvmjd112 njvmjd117.pdf

NJVMJD128T4G NJVMJD128T4G

MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

 7.2. Size:148K  onsemi
njvmjd148.pdf

NJVMJD128T4G NJVMJD128T4G

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


NJVMJD128T4G
  NJVMJD128T4G
  NJVMJD128T4G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top