NJVMJD128T4G . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

NJVMJD128T4G Datasheet (PDF)

5.1. Size:175K onsemi
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MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

6.1. Size:142K onsemi
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MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

7.1. Size:153K onsemi
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MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

7.2. Size:148K onsemi
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MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .