NJVMJD31CG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVMJD31CG

Código: J31C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO252

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NJVMJD31CG datasheet

 5.1. Size:135K  onsemi
 mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf pdf_icon

NJVMJD31CG

 5.2. Size:132K  onsemi
 njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf pdf_icon

NJVMJD31CG

NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm

 6.1. Size:140K  onsemi
 njvmjd31 njvmjd32.pdf pdf_icon

NJVMJD31CG

MOSTRAR MÁS

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