NJVMJD44E3T4G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJVMJD44E3T4G
Código: J44E3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 130
pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar NJVMJD44E3T4G
NJVMJD44E3T4G
Datasheet (PDF)
4.1. Size:115K onsemi
njvmjd44e3.pdf
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MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
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MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S
7.3. Size:157K onsemi
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf
MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT
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