NJVMJD47T4G Todos los transistores

 

NJVMJD47T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJVMJD47T4G
   Código: J47
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 350 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar NJVMJD47T4G

 

NJVMJD47T4G Datasheet (PDF)

 ..1. Size:79K  onsemi
njvmjd47t4g njvmjd50t4g.pdf

NJVMJD47T4G
NJVMJD47T4G

MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT

 ..2. Size:157K  onsemi
mjd47 njvmjd47t4g mjd50 njvmjd50t4g.pdf

NJVMJD47T4G
NJVMJD47T4G

MJD47, NJVMJD47T4G,MJD50, NJVMJD50T4GHigh Voltage PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for line operated audio output amplifier, switchmode supplydrivers and other switching applications.NPN SILICON POWERFeaturesTRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves1 AMPERE(No Suffix)250, 400 VOLTS, 15 WAT

 7.1. Size:115K  onsemi
njvmjd44e3.pdf

NJVMJD47T4G
NJVMJD47T4G

MJD44E3,NJVMJD44E3T4GDarlington Power TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching output or driverhttp://onsemi.comstages in applications such as switching regulators, converters, andpower amplifiers.NPN DARLINGTON SILICONFeaturesPOWER TRANSISTORS Electrically Similar to Popular D44E3 Device10 AMPERES High DC Gain

 7.2. Size:173K  onsemi
njvmjd41c njvmjd42c.pdf

NJVMJD47T4G
NJVMJD47T4G

MJD41C,NJVMJD41CT4G (NPN),MJD42C,NJVMJD42CT4G,NJVMJD42CRLG (PNP)http://onsemi.comComplementary PowerTransistorsSILICONDPAK For Surface Mount Applications POWER TRANSISTORS6 AMPERESDesigned for general purpose amplifier and low speed switching100 VOLTS, 20 WATTSapplications.Features Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix) S

 7.3. Size:148K  onsemi
njvmjd44h11 njvmjd45h11.pdf

NJVMJD47T4G
NJVMJD47T4G

MJD44H11,NJVMJD44H11 (NPN)MJD45H11,NJVMJD45H11 (PNP)Complementary Powerhttp://onsemi.comTransistorsDPAK For Surface Mount Applications SILICONPOWER TRANSISTORSDesigned for general purpose power and switching such as output or8 AMPERESdriver stages in applications such as switching regulators, converters,80 VOLTS, 20 WATTSand power amplifiers.FeaturesMARKING Le

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