NST3946DP6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NST3946DP6T5G
Código: L
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.24 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT963
Búsqueda de reemplazo de transistor bipolar NST3946DP6T5G
NST3946DP6T5G Datasheet (PDF)
nst3946dp6t5g.pdf
NST3946DP6T5GDual ComplementaryGeneral Purpose TransistorThe NST3946DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountwww.onsemi.co
nst3946dp6.pdf
NST3946DP6T5GDual ComplementaryGeneral Purpose TransistorThe NST3946DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi
nst3946dxv6t.pdf
NST3946DXV6T1G,NST3946DXV6T5GComplementary GeneralPurpose TransistorThe NST3946DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surf
nst3946dxv6.pdf
NST3946DXV6Complementary GeneralPurpose TransistorThe NST3946DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563http://onsemi.comsix-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mountapplicati
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BD827A | AD702S | BD712 | DT1610 | HN1C03F
History: BD827A | AD702S | BD712 | DT1610 | HN1C03F
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050