NST489AMT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NST489AMT1G

Código: N2

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.54 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT457

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NST489AMT1G datasheet

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NST489AMT1G

NST489AMT1G, NSVT489AMT1G High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for www.onsemi.com Load Management in 30 VOLTS, 3.0 AMPS Portable Applications NPN TRANSISTOR Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable TSOP-6 CASE 318G These Devices a

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NST489AMT1G

NST489AMT1 High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in http //onsemi.com Portable Applications 30 VOLTS, 3.0 AMPS Features NPN TRANSISTOR Pb-Free Package is Available COLLECTOR MAXIMUM RATINGS (TA = 25 C) 1, 2, 5, 6 Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 V 3 BASE Collector-Base Voltage VCBO 50 V Emitte

 4.1. Size:65K  onsemi
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NST489AMT1G

NST489AMT1 High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in http //onsemi.com Portable Applications 30 VOLTS, 3.0 AMPS Features NPN TRANSISTOR Pb-Free Package is Available COLLECTOR MAXIMUM RATINGS (TA = 25 C) 1, 2, 5, 6 Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 V 3 BASE Collector-Base Voltage VCBO 50 V Emitte

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