2N6835 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

Order this documentMOTOROLAby 2N6836/DSEMICONDUCTOR TECHNICAL DATA2N6836Designer's Data Sheet15 AMPERESwitchmode Series Ultra-FastNPN SILICONPOWER TRANSISTORNPN Silicon Power Transistors450 VOLTS175 WATTSThese transistors are designed for highvoltage, highspeed, power switching ininductive circuits where fall time is critical. They are particularly suited fo

JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6837DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica