NSBA113EDXV6T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSBA113EDXV6T1
   Código: 0G
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta: SOT563

Búsqueda de reemplazo de transistor bipolar NSBA113EDXV6T1

NSBA113EDXV6T1 Datasheet (PDF)

2.1. Size:74K onsemi
nsba113edxv6.pdf

MUN5130DW1,NSBA113EDXV6Dual PNP Bias ResistorTransistorsR1 = 1 kW, R2 = 1 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR

6.1. Size:110K onsemi
nsba113ef3.pdf

MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)

6.2. Size:450K onsemi
mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf