NSBA113EDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSBA113EDXV6T1G
Código: 0G
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 1 kOhm
Resistencia Base-Emisor R2 = 1 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta: SOT563
Búsqueda de reemplazo de transistor bipolar NSBA113EDXV6T1G
NSBA113EDXV6T1G Datasheet (PDF)
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