NSBA115EDXV6 Todos los transistores

 

NSBA115EDXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBA115EDXV6
   Código: 0N
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 100 kOhm
   Resistencia Base-Emisor R2 = 100 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563
 
   - Selección ⓘ de transistores por parámetros

 

NSBA115EDXV6 Datasheet (PDF)

 ..1. Size:116K  onsemi
nsba115edxv6.pdf pdf_icon

NSBA115EDXV6

MUN5136DW1,NSBA115EDXV6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias

 7.1. Size:150K  onsemi
nsba115tf3.pdf pdf_icon

NSBA115EDXV6

MUN2141, MMUN2141L,MUN5141, DTA115TE,DTA115TM3, NSBA115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.2. Size:118K  onsemi
nsba115tdp6.pdf pdf_icon

NSBA115EDXV6

NSBA115TDP6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWPNP Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic biasnetwork consis

 8.1. Size:101K  onsemi
nsba114edxv.pdf pdf_icon

NSBA115EDXV6

NSBA114EDXV6T1,NSBA114EDXV6T5 SERIESPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digi

Otros transistores... 3DD5011 , 2SD5011 , D4203D , NSBA113EDXV6 , NSBA113EDXV6T1 , NSBA113EDXV6T1G , NSBA113EF3 , NSBA113EF3T5G , BD136 , NSBA115EDXV6T1G , NSBA115TDP6 , NSBA115TDP6T5G , NSBA115TF3 , NSBA115TF3T5G , NSBA123EDXV6 , NSBA123EDXV6T1G , NSBA123EF3 .

 

 
Back to Top

 


 
.