2N6837 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6837
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 250 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2N6837
2N6837 Datasheet (PDF)
2n6837.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6837DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-
2n6836re.pdf
Order this documentMOTOROLAby 2N6836/DSEMICONDUCTOR TECHNICAL DATA2N6836Designer's Data Sheet15 AMPERESwitchmode Series Ultra-FastNPN SILICONPOWER TRANSISTORNPN Silicon Power Transistors450 VOLTS175 WATTSThese transistors are designed for highvoltage, highspeed, power switching ininductive circuits where fall time is critical. They are particularly suited fo
2n6836.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
2n6833.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMB
2n6835.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
2n6836.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA
2n6834.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
2n6833.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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