NSVMMUN2112LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMMUN2112LT1G
Código: A6B
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar NSVMMUN2112LT1G
NSVMMUN2112LT1G
Datasheet (PDF)
0.1. Size:111K onsemi
nsvmmun2112lt1g.pdf 
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4.1. Size:119K onsemi
nsvmmun2113lt3g.pdf
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5.1. Size:117K onsemi
nsvmmun2135lt1g.pdf
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5.2. Size:215K onsemi
nsvmmun2132lt1g.pdf
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5.3. Size:109K onsemi
nsvmmun2131lt1g.pdf
MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
5.4. Size:157K onsemi
nsvmmun2133lt1g.pdf
MUN2133, MMUN2133L,MUN5133, DTA143ZE,DTA143ZM3, NSBA143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor
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