NSVMMUN2132LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMMUN2132LT1G
Código: A6J
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar NSVMMUN2132LT1G
NSVMMUN2132LT1G
Datasheet (PDF)
0.1. Size:215K onsemi
nsvmmun2132lt1g.pdf
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nsvmmun2131lt1g.pdf
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nsvmmun2133lt1g.pdf
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