NSVMMUN2217LT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMMUN2217LT1G
Código: A8M
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 35
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar NSVMMUN2217LT1G
NSVMMUN2217LT1G
Datasheet (PDF)
0.1. Size:104K onsemi
nsvmmun2217lt1g.pdf 
MMUN2217L,NSVMMUN2217LDigital Transistors (BRT)R1 = 4.7 kW, R2 = 10 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The Bias ResistorCOLLECTORTransistor (BRT) contains a single transistor with a monolithic bias (OUTPU
4.1. Size:155K onsemi
nsvmmun2212lt1g.pdf
MUN2212, MMUN2212L,MUN5212, DTC124EE,DTC124EM3, NSBC124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
5.1. Size:115K onsemi
nsvmmun2233lt3g.pdf
MUN2233, MMUN2233L,MUN5233, DTC143ZE,DTC143ZM3, NSBC143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BR
5.2. Size:155K onsemi
nsvmmun2232lt3g.pdf
MUN2232, MMUN2232L,MUN5232, DTC143EE,DTC143EM3, NSBC143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor
5.3. Size:110K onsemi
nsvmmun2230lt1g.pdf
MUN2230, MMUN2230L,MUN5230, DTC113EE,DTC113EM3, NSBC113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias ResistorR1BASETransistor (BRT)
5.4. Size:156K onsemi
nsvmmun2235lt1g.pdf
MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)
5.5. Size:214K onsemi
nsvmmun2232lt1g.pdf
MMUN2211LT1G Series,SMMUN2211LT1G Series,NSVMMUN2232LT1GBias Resistor TransistorNPN Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlePIN 3device and its external resistor bias network. The BRT (Bias Resistor COLLECTORR1 (OUTPUT)Transistor) contains a single transistor
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