NSS1C301E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS1C301E

Código: 1C31E

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO252

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NSS1C301E datasheet

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NSS1C301E

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where http //onsemi.com affordable efficient energy control is important. Typi

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NSS1C301E

NSS1C301ET4G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical

 7.1. Size:105K  onsemi
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NSS1C301E

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typi

 7.2. Size:164K  onsemi
 nss1c300et4g.pdf pdf_icon

NSS1C301E

NSS1C300ET4G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical

MOSTRAR MÁS

Otros transistores... NSS12601CF8T1G, NSS1C200MZ4T1G, NSS1C200MZ4T3G, NSS1C201L, NSS1C201MZ4, NSS1C201MZ4T3G, NSS1C300E, NSS1C300ET4G, 2SD669, NSS1C301ET4G, NSVMMBT2222ATT1G, NSVMMBT2907AWT1G, NSVMMBT5087LT1G, NSVMMBT5087LT3G, NSVMMBT5088LT3G, NSVMMBT5401LT3G, NSVMMBT5401WT1G