NSS1C301ET4G Todos los transistores

 

NSS1C301ET4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS1C301ET4G
   Código: 1C31E
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 12.5 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de NSS1C301ET4G

   - Selección ⓘ de transistores por parámetros

 

NSS1C301ET4G Datasheet (PDF)

 ..1. Size:160K  onsemi
 nss1c301et4g.pdf pdf_icon

NSS1C301ET4G

NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherewww.onsemi.comaffordable efficient energy control is important.Typical

 5.1. Size:114K  onsemi
 nss1c301e.pdf pdf_icon

NSS1C301ET4G

NSS1C301ET4G100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications wherehttp://onsemi.comaffordable efficient energy control is important.Typi

 7.1. Size:105K  onsemi
 nss1c300e.pdf pdf_icon

NSS1C301ET4G

NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typi

 7.2. Size:164K  onsemi
 nss1c300et4g.pdf pdf_icon

NSS1C301ET4G

NSS1C300ET4G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.Typical

MOSTRAR MÁS

Otros transistores... NSS1C200MZ4T1G , NSS1C200MZ4T3G , NSS1C201L , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E , NSS1C300ET4G , NSS1C301E , 2SC828 , NSVMMBT2222ATT1G , NSVMMBT2907AWT1G , NSVMMBT5087LT1G , NSVMMBT5087LT3G , NSVMMBT5088LT3G , NSVMMBT5401LT3G , NSVMMBT5401WT1G , NSVMMBT589LT1G .

 

 
Back to Top

 


 
.