NSVMMBT5087LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMMBT5087LT1G
Código: 2Q
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar NSVMMBT5087LT1G
NSVMMBT5087LT1G Datasheet (PDF)
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MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo
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MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR
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