NSVMMBT5088LT3G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMMBT5088LT3G
Código: 1Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.23
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 4.5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar NSVMMBT5088LT3G
NSVMMBT5088LT3G
Datasheet (PDF)
0.1. Size:82K onsemi
nsvmmbt5088lt3g.pdf 
MMBT5088L, MMBT5089LLow Noise TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23 (TO-236)CASE 318MAXIMUM RATINGSSTYLE 6Rating Symbol Value Unit
4.1. Size:99K onsemi
nsvmmbt5087lt1g.pdf
MMBT5087LLow Noise TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter V
6.1. Size:125K onsemi
nsvmmbt5401lt3g.pdf
MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTO
6.2. Size:76K onsemi
nsvmmbt5401wt1g.pdf
MMBT5401WHigh Voltage TransistorPNP SiliconFeatures NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable COLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector-Emitter Vo
6.3. Size:144K onsemi
nsvmmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadhttp://onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change RequirementsSOT-23 (TO-236) These Devices are P
6.4. Size:164K onsemi
mmbt589lt1g nsvmmbt589lt1g.pdf
MMBT589LT1G,NSVMMBT589LT1GHigh Current Surface MountPNP Silicon SwitchingTransistor for Loadwww.onsemi.comManagement in Portable Applications30 VOLTS, 2.0 AMPSPNP TRANSISTORSFeatures NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BF
6.5. Size:81K onsemi
mmbt5401l smmbt5401l nsvmmbt5401l.pdf
MMBT5401L, SMMBT5401L,NSVMMBT5401LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)CompliantCASE 318STYLE 6MAXIMUM RATINGSCOLLECTOR
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