NSVMMBT6520LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVMMBT6520LT1G

Código: 2Z

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.23 W

Tensión colector-base (Vcb): 350 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT23

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NSVMMBT6520LT1G datasheet

 0.1. Size:123K  onsemi
 nsvmmbt6520lt1g.pdf pdf_icon

NSVMMBT6520LT1G

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C

 2.1. Size:196K  onsemi
 mmbt6520l nsvmmbt6520l.pdf pdf_icon

NSVMMBT6520LT1G

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Coll

 5.1. Size:124K  onsemi
 nsvmmbt6517lt1g.pdf pdf_icon

NSVMMBT6520LT1G

MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER C

MOSTRAR MÁS

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