NSBC114EPDP6 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSBC114EPDP6
Código: L
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.27 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 35
Encapsulados: SOT963
Búsqueda de reemplazo de NSBC114EPDP6
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NSBC114EPDP6 datasheet
nsbc114epdp6.pdf
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single
nsbc114epdxv6.pdf
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single
nsbc114edp6.pdf
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit
nsbc114edxv6-d.pdf
NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with (3) (2) (1) a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digital tra
Otros transistores... NSBC113EPDXV6T1G, NSBC114EDP6, NSBC114EDP6T5G, NSBC114EDXV6, NSBC114EDXV6T1G, NSBC114EDXV6T5G, NSBC114EF3, NSBC114EF3T5G, TIP42C, NSBC114EPDP6T5G, NSBC114EPDXV6, NSBC114EPDXV6T1G, NSBC114EPDXV6T5G, NSBC114TDP6, NSBC114TDP6T5G, NSBC114TDXV6, NSBC114TDXV6T1G
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