NSBC114EPDP6 Todos los transistores

 

NSBC114EPDP6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC114EPDP6
   Código: L
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 10 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.27 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: SOT963
 

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NSBC114EPDP6 Datasheet (PDF)

 ..1. Size:101K  onsemi
nsbc114epdp6.pdf pdf_icon

NSBC114EPDP6

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 4.1. Size:101K  onsemi
nsbc114epdxv6.pdf pdf_icon

NSBC114EPDP6

MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 6.1. Size:89K  onsemi
nsbc114edp6.pdf pdf_icon

NSBC114EPDP6

MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

 6.2. Size:81K  onsemi
nsbc114edxv6-d.pdf pdf_icon

NSBC114EPDP6

NSBC114EDXV6T1,NSBC114EDXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digital tra

Otros transistores... NSBC113EPDXV6T1G , NSBC114EDP6 , NSBC114EDP6T5G , NSBC114EDXV6 , NSBC114EDXV6T1G , NSBC114EDXV6T5G , NSBC114EF3 , NSBC114EF3T5G , TIP42C , NSBC114EPDP6T5G , NSBC114EPDXV6 , NSBC114EPDXV6T1G , NSBC114EPDXV6T5G , NSBC114TDP6 , NSBC114TDP6T5G , NSBC114TDXV6 , NSBC114TDXV6T1G .

History: STA457C | BF680H | BF871 | MJW16012 | BFS90B

 

 
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