NSBC114TDP6T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSBC114TDP6T5G

Código: R

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.27 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT963

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NSBC114TDP6T5G datasheet

 3.1. Size:89K  onsemi
 nsbc114tdp6.pdf pdf_icon

NSBC114TDP6T5G

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

 5.1. Size:89K  onsemi
 nsbc114tdxv6.pdf pdf_icon

NSBC114TDP6T5G

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

 6.1. Size:119K  onsemi
 nsbc114tpdxv6.pdf pdf_icon

NSBC114TDP6T5G

MUN5315DW1, NSBC114TPDXV6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

 6.2. Size:155K  onsemi
 nsbc114tf3.pdf pdf_icon

NSBC114TDP6T5G

MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

MOSTRAR MÁS

Otros transistores... NSBC114EF3, NSBC114EF3T5G, NSBC114EPDP6, NSBC114EPDP6T5G, NSBC114EPDXV6, NSBC114EPDXV6T1G, NSBC114EPDXV6T5G, NSBC114TDP6, 2SD718, NSBC114TDXV6, NSBC114TDXV6T1G, NSBC114TDXV6T5G, NSBC114TF3, NSBC114TF3T5G, CPH3244, NSBC114TPDXV6, NSBC114TPDXV6T1G