NSBC123EDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSBC123EDXV6T1G

Código: 7H

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: SOT563

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NSBC123EDXV6T1G datasheet

 2.1. Size:131K  onsemi
 nsbc123edxv6.pdf pdf_icon

NSBC123EDXV6T1G

MUN5231DW1, NSBC123EDXV6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

 6.1. Size:80K  onsemi
 nsbc123epdxv6.pdf pdf_icon

NSBC123EDXV6T1G

MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo

 6.2. Size:109K  onsemi
 nsbc123ef3.pdf pdf_icon

NSBC123EDXV6T1G

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

 6.3. Size:389K  onsemi
 mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf pdf_icon

NSBC123EDXV6T1G

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

MOSTRAR MÁS

Otros transistores... NSVBSP19AT1G, NSVBSS63LT1G, NSVBT2222ADW1T1G, NSVEMC2DXV5T1G, NSVEMD4DXV6T5G, NSVEMX1DXV6T1G, NSVMBT3904DW1T3G, NSBC123EDXV6, 2N4401, NSBC123EF3, NSBC123EF3T5G, NSBC123EPDXV6, NSBC123EPDXV6T1G, NSBC123JDP6, NSBC123JDP6T5G, NSBC123JDXV6, NSBC123JDXV6T1G