NSBC123JPDXV6T1G Todos los transistores

 

NSBC123JPDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSBC123JPDXV6T1G
   Código: 35
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563
 

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NSBC123JPDXV6T1G Datasheet (PDF)

 1.1. Size:103K  onsemi
 nsbc123jpdxv6.pdf pdf_icon

NSBC123JPDXV6T1G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 4.1. Size:103K  onsemi
 nsbc123jpdp6.pdf pdf_icon

NSBC123JPDXV6T1G

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

 6.1. Size:156K  onsemi
 nsbc123jf3.pdf pdf_icon

NSBC123JPDXV6T1G

MUN2235, MMUN2235L,MUN5235, DTC123JE,DTC123JM3, NSBC123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT)

 6.2. Size:127K  onsemi
 nsbc123jdxv6.pdf pdf_icon

NSBC123JPDXV6T1G

MUN5235DW1,NSBC123JDXV6,NSBC123JDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 2.2 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi

MOSTRAR MÁS

Otros transistores... NSBC123JDXV6 , NSBC123JDXV6T1G , NSBC123JDXV6T5G , NSBC123JF3 , NSBC123JF3T5G , NSBC123JPDP6 , NSBC123JPDP6T5G , NSBC123JPDXV6 , A1266 , NSBC123JPDXV6T5G , NSBC123TDP6 , NSBC123TDP6T5G , NSBC123TF3 , NSBC123TF3T5G , NSBC123TPDP6 , NSBC123TPDP6T5G , NSVMUN5131T1G .

History: MA0492 | ADY14 | 2SA1013T | ESM5008

 

 
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