NSVMUN5135DW1T1G Todos los transistores

 

NSVMUN5135DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVMUN5135DW1T1G
   Código: 0M
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT363
 

 Búsqueda de reemplazo de NSVMUN5135DW1T1G

   - Selección ⓘ de transistores por parámetros

 

NSVMUN5135DW1T1G Datasheet (PDF)

 0.1. Size:94K  onsemi
nsvmun5135dw1t1g.pdf pdf_icon

NSVMUN5135DW1T1G

MUN5135DW1,NSBA123JDXV6,NSBA123JDP6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monol

 5.1. Size:109K  onsemi
nsvmun5131t1g.pdf pdf_icon

NSVMUN5135DW1T1G

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 5.2. Size:132K  onsemi
nsvmun5137dw1t1g.pdf pdf_icon

NSVMUN5135DW1T1G

MUN5137DW1,NSBA144WDXV6,NSBA144WDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 47 kW, R2 = 22 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

Otros transistores... NSBC123JPDXV6T5G , NSBC123TDP6 , NSBC123TDP6T5G , NSBC123TF3 , NSBC123TF3T5G , NSBC123TPDP6 , NSBC123TPDP6T5G , NSVMUN5131T1G , BD136 , NSVMUN5137DW1T1G , NSVMUN5211DW1T3G , NSVMUN5212DW1T1G , NSVMUN5213DW1T3G , NSVMUN5214DW1T3G , NSVMUN5215DW1T1G , NSVMUN5233DW1T3G , NSVMUN5236T1G .

History: SE5024 | FTD2058F | DRC4114T | KT8157A | 40407L | BD373C-6 | KT8109A

 

 
Back to Top

 


 
.