NSVMSD42WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSVMSD42WT1G
Código: 1D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT323
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NSVMSD42WT1G Datasheet (PDF)
msd42wt1g nsvmsd42wt1g.pdf

MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
nsvmsd42wt1g.pdf

MSD42WT1G,NSVMSD42WT1GNPN High VoltageTransistorsThis NPN Silicon Planar Transistor is designed for general purposeamplifier applications. This device is housed in the SC-70/SOT-323package which is designed for low power surface mount applications. http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free and are RoHS Compliant3 NSV Prefix for Automo
msd1819a-rt1g nsvmsd1819a-rt1g.pdf

MSD1819A-RT1G,NSVMSD1819A-RT1GGeneral Purpose AmplifierTransistorNPN Silicon Surface Mountwww.onsemi.comThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in theSC-70/SOT-323 package which is designed for low power surfacemount applications.FeaturesSC-70 (SOT-323)CASE 419 High hFE, 210-460STYLE
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .



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