NSVMUN2212T1G Todos los transistores

 

NSVMUN2212T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVMUN2212T1G
   Código: 8B
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT346
 

 Búsqueda de reemplazo de NSVMUN2212T1G

   - Selección ⓘ de transistores por parámetros

 

NSVMUN2212T1G Datasheet (PDF)

 ..1. Size:218K  onsemi
 nsvmun2212t1g.pdf pdf_icon

NSVMUN2212T1G

MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network

 6.1. Size:156K  onsemi
 nsvmun2237t1g.pdf pdf_icon

NSVMUN2212T1G

MUN2237, MMUN2237L,MUN5237, DTC144WE,DTC144WM3, NSBC144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 6.2. Size:218K  onsemi
 nsvmun2233t1g.pdf pdf_icon

NSVMUN2212T1G

MUN2211T1, SMUN2211T1,NSVMUN2211T1 SeriesBias Resistor TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias network

 7.1. Size:111K  onsemi
 nsvmun2112t1g.pdf pdf_icon

NSVMUN2212T1G

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N4061 | 2S322 | NB223EY | CSD1468R | MJ4033 | OC410 | 2SD669AC

 

 
Back to Top

 


 
.